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Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173
Figure 1: Sketch of the graphene/4H-SiC vertical device.
Figure 2: Current–voltage characteristics of the vertical graphene–4H-SiC device. The y-axis indicates the ab...
Figure 3: Current–voltage characteristics of the vertical device after the Pd contacts were glued with conduc...
Figure 4: The typical I–V curve, which describes the voltage and the current flowing through the graphene cha...
Figure 5: Isosurfaces of the molecular orbitals of the pristine C30H14 cluster before and after interaction w...
Figure 6: (a) Dependence of the binding energies of Cd and Hg on the number of heavy metal atoms on graphene ...
Figure 7: Dependence of the binding energy and HOMO-LUMO gap on number of Pb atoms. The top X axis represents...
Figure 8: Total and projected DOS (PDOS) for graphene flakes atoms of the heavy metals: C16H10 cluster withou...
Figure 9: Calculated current–voltage characteristics of the graphene/SiC junction before and after interactio...
Figure 10: Histogram plot of graphene/SiC device sensitivity (at fixed voltage of 1 V) towards different heavy...
Figure 11: Dependence of the sensitive parameter (ratio of work functions of graphene before and after interac...